Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/article/10.1007/s10853-017-1196-1/fulltext.html
Reference28 articles.
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3. Hu S (1994) Nonequilibrium point defects and diffusion in silicon. Mater Sci Eng R Rep 13:105–192. doi: 10.1016/0927-796X(94)90009-4
4. Hu SM (1974) Formation of stacking faults and enhanced diffusion in the oxidation of silicon. J Appl Phys 45:1567–1568. doi: 10.1063/1.1663459
5. Delugas P, Fiorentini V (2004) Energetics of transient enhanced diffusion of boron in Ge and SiGe. Phys Rev B 69:085203–085205. doi: 10.1103/PhysRevB.69.085203
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins;ACS APPL MATER INTER;2022
2. The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins;ACS Applied Materials & Interfaces;2022-06-16
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