Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4775772
Reference73 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100)
3. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
4. High detectivity InAs quantum dot infrared photodetectors
5. Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates
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1. Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si0.5Ge0.5/Si substrates using molecular beam epitaxy;Nanotechnology;2019-12-23
2. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28
3. Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy;Semiconductor Physics Quantum Electronics and Optoelectronics;2016-12-05
4. Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy;Nanoscale Research Letters;2016-02-24
5. Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching;Nanoscale Research Letters;2014-02-12
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