Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1496142
Reference14 articles.
1. Resonant cavity light‐emitting diode
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4. Controlled atomic spontaneous emission fromEr3+in a transparent Si/SiO2microcavity
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1. Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal;Journal of Applied Physics;2013-01-21
2. Ge quantum dots light-emitting devices;Frontiers of Optoelectronics;2012-01-03
3. Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures;Silicon–Germanium (SiGe) Nanostructures;2011
4. The interdependency of morphology, strain and composition in buried GeSi/Si(001) quantum dots;Philosophical Magazine;2010-12-14
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