Effect of substrate miscut on the electron mobility in InSb(001) structures on Ge and Ge-on-insulator substrates
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-013-0059-7.pdf
Reference15 articles.
1. Ashley T, Buckle L, Datta S et al (2007) Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications. Electron Lett 43:777–778
2. Solin SA, Thio T, Hines DR et al (2000) Enhanced room-temperature geometric magnetoresistance in inhomogeneous narrow-gap semiconductors. Science 289:1530–1532
3. Mishima TD, Edirisooriya M, Santos MB (2007) Reduction of micro twin defects for high-electron-mobility InSb quantum wells. Appl Phys Lett 91:062106
4. Känel HV, Kummer M, Isella G et al (2002) Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition. Appl Phys Lett 80:2922–2924
5. Michel E, Xu J, Kim JD et al (1996) InSb infrared photo detectors on Si substrates grown by molecular beam epitaxy. IEEE Photon Technol Lett 8:673–675
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