B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions-Reference-Cited by-同舟云学术

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B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions

Published:2006-12 Issue:1-2 Volume:253 Page:46-49
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Di Marino M.,Napolitani E.,Mastromatteo M.,Bisognin G.,De Salvador D.,Carnera A.,Mirabella S.,Impellizzeri G.,Priolo F.,Graoui H.,Foad M.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2005.

2. Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

3. Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

4. Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism

5. Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon;Japanese Journal of Applied Physics;2018-07-09

2. Quantitativeness in laser-assisted atom probe analysis of boron and carbon codoped in silicon;Japanese Journal of Applied Physics;2017-10-02

3. Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures;Japanese Journal of Applied Physics;2014-06-24

4. Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials;Journal of Applied Physics;2012-04

5. Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion;Applied Physics Letters;2011-06-06

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