Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism-Reference-Cited by-同舟云学术

Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism

Published:2002-01-11 Issue:4 Volume:65 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mirabella S.,Coati A.,Salvador D. De,Napolitani E.,Mattoni A.,Bisognin G.,Berti M.,Carnera A.,Drigo A. V.,Scalese S.,Pulvirenti S.,Terrasi A.,Priolo F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.045209/fulltext

Reference42 articles.

1. Point defects and dopant diffusion in silicon

2. Impurity diffusion via an intermediate species: The B-Si system

3. Experiments on atomic-scale mechanisms of diffusion

4. Interstitial traps and diffusion in epitaxial silicon films

5. Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions

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