Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon
Author:
Funder
National Science Council of the Republic of China
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
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1. Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers;Crystals;2019-12-12
2. Dissolution Behaviors of Trace Muscovite during Pressure Leaching of Hydrothermal Vein Quartz Using H2SO4 and NH4Cl as Leaching Agents;Minerals;2018-02-11
3. Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions;Materials;2018-02-11
4. Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon;Journal of Applied Physics;2016-04-07
5. Influence of hydrogen fluence on surface blistering of H and He co-implanted Ge;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-02
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