Influence of hydrogen fluence on surface blistering of H and He co-implanted Ge-Reference-Cited by-同舟云学术

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Influence of hydrogen fluence on surface blistering of H and He co-implanted Ge

Published:2016-02 Issue: Volume:368 Page:86-89
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Dai Jiayun^ORCID,Xue Zhongying,Zhang Miao,Wei Xing,Wang Gang,Di Zengfeng

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Silicon on insulator material technology

2. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+

3. Comparison of platelet formation in hydrogen and helium-implanted silicon

4. Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

5. Surface blistering of low temperature annealed hydrogen and helium co-implanted germanium and its application to splitting of bonded wafer substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Annealing on Microstructures and Hardening of Helium-Hydrogen-Implanted Sequentially Vanadium Alloys;Nanoscale Research Letters;2018-03-02

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