Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945032
Reference31 articles.
1. Silicon on insulator material technology
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3. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
4. Localized exfoliation versus delamination in H and He coimplanted (001) Si
5. Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon
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