Time evolution of donor activation at low temperatures with co-implantation of phosphorus and hydrogen in silicon

Author:

Lee Bo-Wen,Lin Jui-Chang,Chang Ruey-DarORCID,Chu Che-Men,Woon Wei-Yen

Funder

National Science and Technology Council

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

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4. Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si;Csepregi;J. Appl. Phys.,1978

5. Solid phase epitaxy versus random nucleation and growth in sub-20 nm wide fin field-effect transistors;Duffy;Appl. Phys. Lett.,2007

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