Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/11/2/282/pdf
Reference38 articles.
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4. Fabrication of Single Crystalline SiC Layer on High Temperature Glass
5. Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon
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