Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference15 articles.
1. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
2. Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN
3. Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
4. Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer
5. Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN
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3. Capacitive sensing for measuring the conduction zone of low density pentaerythritol tetranitrate (PETN);Journal of Applied Physics;2023-11-13
4. Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy;Semiconductors;2018-11-07
5. Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux;Current Applied Physics;2015-03
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