Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1644621
Reference21 articles.
1. Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution
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