Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale-Reference-Cited by-同舟云学术

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Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale

Published:2021-09-06 Issue:11 Volume:15 Page:2100234
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Keller Stacia¹^ORCID,Pasayat Shubhra S.¹^ORCID,Gupta Chirag¹^ORCID,DenBaars Steven P.¹^ORCID,Nakamura Shuji¹,Mishra Umesh K.¹

Affiliation:

1. Electrical & Computer Engineering and Materials Departments University of California Santa Barbara Santa Barbara CA 93106 USA

Funder

Office of Naval Research

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100234

Reference60 articles.

1. Elastic strain relaxation in patterned heteroepitaxial structures

2. Recent advances in semiconductor nanowire heterostructures

3. Atomic Scale Strain Relaxation in Axial Semiconductor III–V Nanowire Heterostructures

4. Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

5. Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells

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3. Nanomaterial integration in micro LED technology: Enhancing efficiency and applications;Next Nanotechnology;2024

4. Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy;Physica Scripta;2023-12-29

5. Recent progress of InGaN-based red light emitting diodes;Micro and Nanostructures;2023-11

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