Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates-Reference-Cited by-同舟云学术

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Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates

Published:2005-03-11 Issue:No. 13 Volume:44 Page:L405-L407
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Heikman Sten,Keller Stacia,Newman Scott,Wu Yuan,Moe Craig,Moran Brendan,Schmidt Mathew,Mishra Umesh K.,Speck James S.,DenBaars Steven P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles;Applied Physics Letters;2021-08-16

2. Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system;Nano Energy;2020-11

3. Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures;Journal of Crystal Growth;2019-04

4. Epitaxial growth of III-nitride electronic devices;III-Nitride Electronic Devices;2019

5. Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes;Crystals;2017-10-04

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