Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy-Reference-Cited by-同舟云学术

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

Published:2018-11-07 Issue:12 Volume:52 Page:1529-1533
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mizerov A. M.,Timoshnev S. N.,Sobolev M. S.,Nikitina E. V.,Shubina K. Yu.,Berezovskaia T. N.,Shtrom I. V.,Bouravleuv A. D.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782618120175.pdf

Reference13 articles.

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3. J. Lu, X. Zheng, M. Guidry, D. Denninghoff, E. Ahmadi, S. Lal, S. Keller, P. S. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 104, 092107 (2014).

4. S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 90, 191908 (2007).

5. Sang-Tae Lee, Byung-Guon Park, Moon-Deock Kim, Jae-Eung Oh, Song-Gang Kim, Young-Heon Kim, and Woo-Chul Yang, Curr. Appl. Phys. 12, 385e388 (2012).

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