Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors-Reference-Cited by-同舟云学术

Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

Published:2014-03-03 Issue:9 Volume:104 Page:092107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lu Jing,Zheng Xun,Guidry Matthew,Denninghoff Dan,Ahmadi Elahe,Lal Shalini,Keller Stacia,DenBaars Steven P.,Mishra Umesh K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4867508

Reference18 articles.

1. Self-aligned-gate GaN-HEMTs with heavily-doped n⁺-GaN ohmic contacts to 2DEG

2. Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures

3. N-polar GaN∕AlGaN∕GaN high electron mobility transistors

4. Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

5. Comparison of N- and Ga-Face GaN HEMTs Through Cellular Monte Carlo Simulations

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