Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy-Reference-Cited by-同舟云学术

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Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

Published:2017-05 Issue: Volume:176 Page:11-22
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Arroyo Rojas Dasilva Yadira,Kozak Roksolana,Erni Rolf,Rossell Marta D.

Funder

Swiss National Science Foundation

Sinergia Project

IBM/Empa Master Joint Development Agreement

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference70 articles.

1. Stacking faults and twins in gallium phosphide layers grown on silicon;Narayanan;Philos. Mag. A,2002

2. GaP heteroepitaxy on Si(001) correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure;Beyer;J. Appl. Phys.,2012

3. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy;Hosseini Vajargah;J. Appl. Phys.,2012

4. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers;Ma;J. Cryst. Growth,2013

5. Vertical III–V nanowire device integration on Si(100);Borg;Nano Lett.,2014

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