Stacking faults and twins in gallium phosphide layers grown on silicon-Reference-Cited by-同舟云学术

Stacking faults and twins in gallium phosphide layers grown on silicon

Published:2002-03 Issue:4 Volume:82 Page:685-698
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Narayanan V.,Mahajan S.,Bachmann K. J.,Woods V.,Dietz N.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418610208243196

Reference23 articles.

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2. Carter, C. B., Cho, N. H., Elgat, Z., Fletcher, R. and Wagner, D. K. 1985.Microscopy of Semiconducting Materials 1985, Institute of Physics Conference Series Edited by: Cullis, A. G. and Holt, D. B. Vol. 65, 221–226. Bristol: Institute of Physics.

3. The martensitic transformation in silicon—II. crystallographic analysis

4. HREM of compound semiconductors

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