Author:
de Cooman B.C.,Cho N.-H.,Elgat Z.,Carter C.B.
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. On the mobility of partial dislocations in silicon
2. Atomic structure of [011] and [001] near-coincident tilt boundaries in germanium and silicon
3. Proc. 13th Conf. on Defects in Semiconductors;Kuesters,1985
4. N.-H. Cho, K. Wagner, R. Fletcher, Z. Elgat and C.B. Carter, submitted for publication.
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