Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%;Lee;Journal of Crystal growth,2011
2. Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper;Lau;Optics Express,2011
3. High performance InGaN LEDs on Si (111) substrates grown by MOCVD;Egawa;Journal of Physics D: Applied Physics,2010
4. Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers;Reiher;Journal of Crystal Growth,2003
5. Growth of blue GaN LED structures on 150-mm Si(111);Dadgar;Journal of Crystal Growth,2006
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