Comparison of structural and optical properties in strained GaInAsP MQW structures grown by MOVPE and MOMBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Structural and optical properties of 1.3 μm wavelength tensile-strained InGaAsP multiquantum wells grown by metalorganic molecular beam epitaxy
2. The role of strain and composition on the morphology of InGaAsP layers grown on 〈0 0 1〉InP substrates
3. Gas source molecular beam epitaxy of alternated tensile / compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm
4. Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain-compensated InGaAsSb/InGaAsSb multiquantum-well structure grown on InP (0 0 1) substrate as optical absorber for wavelengths beyond 2 μm;Journal of Crystal Growth;2020-04
2. Effects of substrate and compositional disorder upon optical and lattice vibration properties of quaternary semiconductor GaxIn1−xAsyP1−y;Infrared Physics & Technology;2014-03
3. Role of strain on the wavy growth onset in strain-balanced InGaAs-based multiquantum wells;Journal of Applied Physics;2002-12-15
4. Extended defects in InGaAs/InGaAs strain-balanced multiple quantum wells for photovoltaic applications;Journal of Physics: Condensed Matter;2002-11-22
5. Mechanisms in embedded selective epitaxy and overgrowth of an integrated laser/modulator quantum well structure using MOMBE and MOVPE;MRS Proceedings;2000
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