Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference40 articles.
1. Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure
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4. Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy
5. Dynamics of island formation in the growth of InAs/InP quantum wells
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1. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02
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