Strained InGaAs/InAlAs quantum wells for complementary III–V transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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4. S. Oktyabrsky, p-Type channel field-effect transistors, Fundamentals of III–V Semiconductor MOSFETs, 2010, pp. 349–378 (Chapter 12)
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