Structural and optical properties of 1.3 μm wavelength tensile-strained InGaAsP multiquantum wells grown by metalorganic molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364180
Reference20 articles.
1. Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation
2. Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−ylayers lattice matched to InP substrates
3. Elimination of wavy layer growth phenomena in strain-compensated GaInAsP/GaInAsP multiple quantum well stacks
4. Lateral modulations in zero‐net‐strained GaInAsP multilayers grown by gas source molecular‐beam epitaxy
5. Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy
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1. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
2. Optical characterization of IR-active composite glasses;Optical Materials;2001-12
3. A Novel Analysis Method for Peak Broadening Due to Thin Structures in Double Crystal X-Ray Diffraction Measurements;Japanese Journal of Applied Physics;2001-09-15
4. Comparison of structural and optical properties in strained GaInAsP MQW structures grown by MOVPE and MOMBE;Journal of Crystal Growth;2000-02
5. Structural and optical characterization of strained and strain-compensated InGaAsP/InP quantum well laser structures;Journal of Crystal Growth;1998-11
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