Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation
2. Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid‐phase epitaxial (001) GaInAsP layers
3. Spinodal decomposition in InGaAsP epitaxial layers
4. Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−ylayers lattice matched to InP substrates
5. Two-dimensional phase separation inIn1−xGaxAsyP1−yepitaxial layers
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