Role of strain on the wavy growth onset in strain-balanced InGaAs-based multiquantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1522744
Reference8 articles.
1. InGaAs/InGaAs strain-compensated quantum well cells for thermophotovoltaic applications
2. Self‐induced laterally modulated GaInP/InAsP structure grown by metal‐organic vapor‐phase epitaxy
3. Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells
4. Temperature and strain dependence of the roughening transition in III‐V semiconductor and SiGe epitaxial growth
5. Defects in epitaxial multilayers
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1. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02
2. Strain-compensated InGaAsSb/InGaAsSb multiquantum-well structure grown on InP (0 0 1) substrate as optical absorber for wavelengths beyond 2 μm;Journal of Crystal Growth;2020-04
3. Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer;Applied Physics Letters;2016-03-07
4. Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices;Journal of Physics D: Applied Physics;2009-03-20
5. Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition;Quantum Dots, Particles, and Nanoclusters III;2006-02-09
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