Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer
Author:
Affiliation:
1. Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Funder
National Science Foundation (NSF)
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4943182
Reference25 articles.
1. High-performance InAs quantum-dot lasers near 1.3 μm
2. Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
3. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell
4. Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
5. Emitter degradation in quantum dot intermediate band solar cells
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1. Suppression of Strain Relaxation in VO2/TiO2 Multilayered Films;ACS Applied Electronic Materials;2023-04-04
2. Internal Electric Fields of Flexible GaAs Solar Cells Fabricated Using Epitaxial Lift-off;Applied Science and Convergence Technology;2020-01-31
3. Quantum engineering of intrinsic losses in the diluted nitride InAsN quantum dot intermediate band solar cell;Journal of Photonics for Energy;2019-10-30
4. Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure;Applied Physics Letters;2019-08-26
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