Suppression of Strain Relaxation in VO<sub>2</sub>/TiO<sub>2</sub> Multilayered Films-Reference-Cited by-同舟云学术

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Suppression of Strain Relaxation in VO₂/TiO₂ Multilayered Films

Published:2023-04-04 Issue:4 Volume:5 Page:2433-2438
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chen Binjie¹^ORCID,Yang Chuchu²^ORCID,Feng Bin²^ORCID,Ikuhara Yuichi²^ORCID,Ohta Hiromichi³^ORCID

Affiliation:

1. Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan

2. Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan

3. Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00246

Reference36 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. Measurement of a solid-state triple point at the metal–insulator transition in VO2

3. Extended Mapping and Exploration of the Vanadium Dioxide Stress-Temperature Phase Diagram

4. Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

5. Nonvolatile Control of Metal–Insulator Transition in VO ₂ by Ferroelectric Gating

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of buffer layers on the strain-induced insulator-metal transition of VO ₂ thin films: a review;Critical Reviews in Solid State and Materials Sciences;2024-09-13

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