The role of strain and composition on the morphology of InGaAsP layers grown on 〈0 0 1〉InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Reduction of lasing threshold current density by the lowering of valence band effective mass
2. Insitumeasurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates
3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
4. Effect of strain on surface morphology in highly strained InGaAs films
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1. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02
2. Strain Effects on Radiation Tolerance of Triple-Junction Solar Cells With InAs Quantum Dots in the GaAs Junction;IEEE Journal of Photovoltaics;2014-01
3. Concurrent spinodal decomposition and surface roughening in thin solid films;Applied Physics Letters;2011-08-08
4. Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy;Journal of Crystal Growth;2010-07
5. Role of the V–III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE;Journal of Crystal Growth;2007-01
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