Role of the V–III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Spontaneous decomposition and ordering during epitaxial growth
2. Growth and characterisation of layers with composition close to crossover from direct to indirect band gap
3. The role of strain and composition on the morphology of InGaAsP layers grown on 〈0 0 1〉InP substrates
4. Performance of GaxIn1−xP/GaAs heterojunctions grown by metal‐organic molecular‐beam epitaxy and metal‐organic vapor‐phase epitaxy
5. Spinodal-like decomposition of grown by gas source molecular beam epitaxy
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1. The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain;Materials Science and Engineering: B;2022-10
2. Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio;Applied Physics Letters;2012-07-30
3. Influence of surface strain on the MOVPE growth of InGaP epitaxial layers;Applied Physics A;2007-02-22
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