Performance of GaxIn1−xP/GaAs heterojunctions grown by metal‐organic molecular‐beam epitaxy and metal‐organic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356995
Reference26 articles.
1. Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition
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3. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
4. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
5. On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors
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1. Quantification of InxGa1−xP composition modulation by nanometric scale HAADF simulations;Applied Surface Science;2013-03
2. Broadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics;Journal of Applied Physics;2009-05-15
3. Strain control and spontaneous phase ordering in vertical nanocomposite heteroepitaxial thin films;Nature Materials;2008-03-02
4. Photoluminescence and TEM characterization of (AlyGa1–y)1–xInxP layers grown on graded buffers;physica status solidi (c);2007-04
5. Influence of surface strain on the MOVPE growth of InGaP epitaxial layers;Applied Physics A;2007-02-22
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