Photoluminescence and TEM characterization of (AlyGa1–y)1–xInxP layers grown on graded buffers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
1. Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials
2. Growth and characterization of compositionally graded InGaP layers on GaAs substrate by solid-source molecular beam epitaxy
3. Photoluminescence Processes inIn1−xGaxPat 2°K
4. Growth and characterisation of layers with composition close to crossover from direct to indirect band gap
5. Material properties of graded composition InxGa1−xP buffer layers grown on GaP by organometallic vapor phase epitaxy
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