Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4739835
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2. Optically detected kinetic carrier transfer in InP-GaP lateral nanowires;Journal of Luminescence;2018-10
3. Detailed carrier recombination in lateral composition modulation structure;Applied Physics Express;2018-08-03
4. Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures;Applied Physics Express;2017-01-16
5. Robust optical properties of sandwiched lateral composition modulation GaInP structure grown by molecular beam epitaxy;Applied Physics Letters;2016-12-26
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