Diffusion of acceptors in n-type and semi-insulating InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Secondary ion mass spectrometry and electrical characterization of Zn diffusion inn‐type InP
2. Donor‐acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition
3. Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD
4. Zinc‐stimulated outdiffusion of iron in InP
5. Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy
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1. Wet Chemical Treatment and Mg Doping of p‐InP Surfaces for Ohmic Low‐Resistive Metal Contacts;Advanced Engineering Materials;2023-07-28
2. Effects of Zn diffusion in tunnel junction and its solution for high efficiency large area flexible GaInP/GaAs/InGaAs tandem solar cell;Solar Energy Materials and Solar Cells;2021-09
3. Effect of Si and Zn doping on surface defects in AlGaInAs compositionally graded buffer by MOCVD;Japanese Journal of Applied Physics;2020-02-01
4. Influence of Zn–Si donor–acceptor pair traps in invert InGaP/GaAs dual-junction solar cell by MOCVD;Japanese Journal of Applied Physics;2019-07-12
5. Capacitance–voltage measurements on p–n–p InP structures;Physica B: Condensed Matter;2009-01
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