Donor‐acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105361
Reference7 articles.
1. Secondary ion mass spectrometry and electrical characterization of Zn diffusion inn‐type InP
2. Silicon incorporation in InP during LP-MOCVD using disilane
3. Chemical Interactions Among Defects in Germanium and Silicon
4. Point defects and dopant diffusion in silicon
5. The diffusion of antimony in heavily doped and n- and p-type silicon
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2. Effects of Zn diffusion in tunnel junction and its solution for high efficiency large area flexible GaInP/GaAs/InGaAs tandem solar cell;Solar Energy Materials and Solar Cells;2021-09
3. Influence of Zn–Si donor–acceptor pair traps in invert InGaP/GaAs dual-junction solar cell by MOCVD;Japanese Journal of Applied Physics;2019-07-12
4. Continuous-wave operation up to 20 °C of deep-ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 15-μm wavelength;Optics Express;2015-04-22
5. Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy;Physical Review B;2012-10-08
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