Secondary ion mass spectrometry and electrical characterization of Zn diffusion inn‐type InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343525
Reference20 articles.
1. Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition
2. Zinc Diffusion Across the Heterojunction in InP/InGaAsP Heterostructures
3. Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy
4. Carrier Density Profiles in Zn- and Cd-Diffused InP
5. Diffusion of Cd And Zn In InP between 550 and 650°C
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