Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD-Reference-Cited by-同舟云学术

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Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD

Published:1992-02 Issue:2 Volume:21 Page:173-179
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Blaauw C.,Emmerstorfer B.,Kreller D.,Hobbs L.,Springthorpe A. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02655833.pdf

Reference23 articles.

1. B. Tuck, “Atomic Diffusion in III-V Semiconductors,” Adam Hilger, Bristol and Philadelphia (1988).

2. B. Tuck and A. Hooper, J. Phys.D8, 1806 (1975).

3. B. Tuck and M. D. Zahari, Inst. Phys. Conf. Ser.33a, 177 (1977).

4. K. Kazmierski, A. M. Huber, G. Morillot and B. de Cremoux, Jpn. J. Appl. Phys.23, 628 (1984).

5. B. Tuck, J. Phys.D18, 557 (1985).

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1. Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation;Optics Express;2012-08-15

2. Donor-acceptor interactions in Al0.5In0.5P;Journal of Electronic Materials;2002-02

3. Interaction of p-type dopants during diffusion in InP;Semiconductor Science and Technology;2000-03-01

4. Diffusion of acceptors in n-type and semi-insulating InP;Journal of Crystal Growth;2000-01

5. Peculiarities of the initial stage of Zn diffusion into InP from polymer spin-on films;Solid-State Electronics;1996-10

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