Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well diodes lattice-matched to InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Growth and properties of GaAsSb/InGaAs superlattices on InP
2. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
3. Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxy
4. Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate
5. Photoluminescence properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP
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1. Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates;physica status solidi (a);2016-11-08
2. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP;Applied Physics Letters;2015-06-08
3. 2.86 µm room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates;Japanese Journal of Applied Physics;2014-01-24
4. Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrate;Physica E: Low-dimensional Systems and Nanostructures;2010-09
5. Electroluminescence of In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5Type-II Quantum Well Light-Emitting Diodes Grown on InP Substrates by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2007-06-06
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