Electroluminescence of In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5Type-II Quantum Well Light-Emitting Diodes Grown on InP Substrates by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
2. InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38 [micro sign]m
3. Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates
4. InAsSbN Quantum Well Laser Diodes Operating at 2-µm-Wavelength Region Grown on InP Substrates
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1. Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN;Crystals;2023-10-17
2. Dilute bismide and nitride alloys for mid-IR optoelectronic devices;Mid-infrared Optoelectronics;2020
3. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP;Applied Physics Letters;2015-06-08
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