Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/43/i=10A/a=L1320/pdf
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InP-based InGaAsSbN quantum well laser diodes in the 2-μm wavelength region;Electronics and Communications in Japan;2011-04-25
2. Uniformity study of wafer-scale InP-to-silicon hybrid integration;Applied Physics A;2010-08-21
3. InP-Based InGaAsSbN Quantum Well Laser Diodes in 2.MU.m Wavelength Region;IEEJ Transactions on Electronics, Information and Systems;2008
4. Electroluminescence of In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5Type-II Quantum Well Light-Emitting Diodes Grown on InP Substrates by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2007-06-06
5. Properties of InAsSbN quantum well laser diodes operating at 2μm wavelength region grown on InP substrates;Journal of Crystal Growth;2007-04
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