InP-based InGaAsSbN quantum well laser diodes in the 2-μm wavelength region
Author:
Publisher
Wiley
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy,Signal Processing
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/ecj.10195/fullpdf
Reference12 articles.
1. Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm;Boehm;J Cryst Growth,2007
2. Effects of annealing on electroluminescence and laser operation of InGaAsSbN quantum well diodes grown on InP substrates;Kawamura;Jpn J Appl Phys,2004
3. Properties of InAsSbN quantum well laser diodes operating at 2 μm wavelength region on InP substrates;Kawamura;J Cryst Growth,2007
4. Wagner J Serries D Kohler K Gasner P Maier M Kirste L Kiefer R. 2004 32
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