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Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

  • Published:2018-02 Issue: Volume:483 Page:140-146
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Donchev V.,Milanova M.,Asenova I.,Shtinkov N.,Alonso-Álvarez D.,Mellor A.,Karmakov Y.,Georgiev S.,Ekins-Daukes N.

Funder

Bulgarian National Science Fund

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference48 articles.

1. Lattice-matched multijunction solar cells employing a 1 eV GaInNAsSb bottom cell;Derkacs;J. Photonics Energy,2012

2. Electromodulation spectroscopy of GaInNAsSb/GaAs quantum wells: the conduction band offset and the electron effective mass issues;Misiewicz,2008

3. Interdiffused SbN-based quantum well on GaAs for 1300–1550 nm diode lasers;Arif;MRS Proc.,2005

4. Effect of Sb incorporation on electroluminescence of InGaAsSbN quantum well diodes grown on GaAs substrates;Kawamura;Jpn. J. Appl. Phys.,2008

5. Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs;Bank;Electron. Lett.,2006

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