Affiliation:
1. Osaka Pefecture University
2. CREST-JST
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Reference12 articles.
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4. (4) Y. Kawamura and N. Inoue : “Properties of InAsSbN quantum well laser diodes operating at 2μm wavelength region on InP substrates”, J. Crystal Growth, Vol. 301-302, p. 963 (2007)
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