Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP-Reference-Cited by-同舟云学术

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Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

Published:2015-06-08 Issue:23 Volume:106 Page:232105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wheatley R.¹,Kesaria M.¹,Mawst L. J.²,Kirch J. D.²^ORCID,Kuech T. F.³,Marshall A.¹,Zhuang Q. D.¹,Krier A.¹

Affiliation:

1. Physics Department, Lancaster University, Lancaster LA1 4YB, United Kingdom

2. Department of Electrical and Computer Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, Wisconsin 53706, USA

3. Department of Chemical and Biological Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, Wisconsin 53706, USA

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/apl/106/23/1.4922590.pdf?itemId=/content/aip/journal/apl/106/23/10.1063/1.4922590&mimeType=pdf&containerItemId=content/aip/journal/apl

Reference40 articles.

1. Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K

2. Interband Mid-IR Semiconductor Lasers

3. Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well diodes lattice-matched to InP

4. InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

5. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

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1. Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN;Crystals;2023-10-17

2. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01

3. Investigations of monoclinic- and orthorhombic-based (BxGa1−x)2O3 alloys;Applied Physics Letters;2020-07-06

4. Dilute bismide and nitride alloys for mid-IR optoelectronic devices;Mid-infrared Optoelectronics;2020

5. Structural and electronic properties of dilute-selenide gallium oxide;AIP Advances;2019-12-01

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