Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1687981
Reference12 articles.
1. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
2. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
3. The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers
4. Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers
5. Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers
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1. Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells;physica status solidi (RRL) – Rapid Research Letters;2021-05-02
2. Applications of III-V Semiconductors for Mid-infrared Lasers;Molecular Beam Epitaxy;2019-02-08
3. Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer;Applied Sciences;2019-01-04
4. Optimization of Type-II ‘W’ shaped InGaAsP/GaAsSb nanoscale-heterostructure under electric field and temperature;Superlattices and Microstructures;2017-12
5. GaSb-based >3µm laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation;Journal of Crystal Growth;2015-08
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