Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1517176
Reference6 articles.
1. 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
2. Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers
3. Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers
4. cw degradation at 300°K of GaAs double‐heterostructure junction lasers. II. Electronic gain
5. Direct measurements of heterobarrier leakage current and modal gain in 2.3 [micro sign]m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers
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