cw degradation at 300°K of GaAs double‐heterostructure junction lasers. II. Electronic gain
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662905
Reference16 articles.
1. Injected Carrier Lifetime and Aging of GaAs Injection Lasers
2. Direct Evidence for Generation of Defect Centers during Forward‐Bias Degradation of GaAs1−xPxElectroluminescent Diodes
3. Catastrophic degradation in GaAs laser diodes
4. Frequency lock of the hydrogen cyanide laser to a microwave frequency standard
5. Physical basis of noncatastrophic degradation in GaAs injection lasers
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