Direct measurements of heterobarrier leakage current and modal gain in 2.3 [micro sign]m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers-Reference-Cited by-同舟云学术

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Direct measurements of heterobarrier leakage current and modal gain in 2.3 [micro sign]m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

Published:1999 Issue:4 Volume:35 Page:298
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Donetsky D.V.,Belenky G.L.,Garbuzov D.Z.,Lee H.,Martinelli R.U.,Taylor G.,Luryi S.,Connolly J.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19990242?crawler=true&mimetype=application/pdf

Reference5 articles.

1. Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers

2. cw degradation at 300°K of GaAs double‐heterostructure junction lasers. II. Electronic gain

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1. HIGH POWER TYPE-I GASB-BASED LASERS;Frontiers in Electronics;2006-08

2. HIGH POWER TYPE-I GASB-BASED LASERS;International Journal of High Speed Electronics and Systems;2006-06

3. GaSb-based lasers for spectra region 2-4 μm: challenges and limitations;SPIE Proceedings;2005-03-25

4. Absorption and single-pass gain measurements in optically pumped type-II midinfrared laser structures;IEEE Journal of Quantum Electronics;2004-12

5. High-Power 2.3-<tex>$mu$</tex>m GaSb-Based Linear Laser Array;IEEE Photonics Technology Letters;2004-10

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