Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference48 articles.
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3. Design and analysis of 2- μm InGaSb/GaSb quantum well lasers integrated onto silicon-on-insulator (SOI) waveguide circuits through an Al2O3 bonding layer;Li;IEEE J. Sel. Top. Quantum Electron.,2016
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5. High power 2.4 μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1 W of continuous wave output power and a maximum power-conversion efficiency of 17.5%;Shterengas;Appl. Phys. Lett.,2007
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